Filament formation in a tapered GaAlAs optical amplifierGOLDBERG, L; SURETTE, M. R; MEHUYS, D et al.Applied physics letters. 1993, Vol 62, Num 19, pp 2304-2306, issn 0003-6951Article

GaAs/GaAlAs SQW-GRINSCH-BCRW-laser grown by molecular beam epitaxyGROTHE, H; JORDAN, V; HARTH, W et al.AEU. Archiv für Elektronik und Übertragungstechnik. 1991, Vol 45, Num 2, pp 124-126, issn 0001-1096Article

Selectively doped double-heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laserYASUHIRA, N; SUEMUNE, I; KAN, Y et al.Applied physics letters. 1990, Vol 56, Num 15, pp 1391-1393, issn 0003-6951Article

Precise determination of turning mirror loss using GaAs/AlGaAs lasers with up to ten 90° intracavity turning mirrorsJOHNSON, J. E; TANG, C. L.IEEE photonics technology letters. 1992, Vol 4, Num 1, pp 24-26Article

Investigation of characteristics of pulse generator employing AlGaAs p-n-i-n₊ structureKALANTAROVA, Z. S.Telecommunications & radio engineering. 1992, Vol 47, Num 2, pp 139-141, issn 0040-2508Article

A high-power GaAlAs superluminescent diode with an antireflective window structureTATEOKA, K; NAITO, H; YURI, M et al.IEEE journal of quantum electronics. 1991, Vol 27, Num 6, pp 1568-1573, issn 0018-9197Article

Low-temperature LPE technique for the performance of visible AlGaAs (SC) lasersDIAZ, P; PRUTSKIJ, T. A; LOPEZ, F et al.Crystal research and technology (1979). 1990, Vol 25, Num 12, pp 1419-1424, issn 0232-1300Article

Experimental measurement of bulk and edge generation in Al_0.4Ga_0.6As PiN structuresNEUDECK, P. G; COOPER, J. A; MELLOCH, M. R et al.Applied physics letters. 1991, Vol 58, Num 11, pp 1175-1177, issn 0003-6951Article

High-power and high-spatial-coherence broad-area power amplifierANDREWS, J. R; SCHUSTER, G. L.Optics letters. 1991, Vol 16, Num 12, pp 913-915, issn 0146-9592Article

A two-dimensional nonisothermal finite element simulation of laser diodesGEN-LIN TAN; BEWTRA, N; LEE, K et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 3, pp 822-835, issn 0018-9197Article

20 dB contrast GaAs/AlGaAs multiple quantum-well nonresonant modulatorsAMANO, C; MATSUO, S; KUROKAWA, T et al.IEEE photonics technology letters. 1992, Vol 4, Num 1, pp 31-33Article

21 W broad area near-diffraction-limited semiconductor amplifierGOLDBERG, L; MEHUYS, D.Applied physics letters. 1992, Vol 61, Num 6, pp 633-635, issn 0003-6951Article

Spray selective etch process for short-cavity fabrication of GaAs/GaAlAs surface emitting laserTANOBE, H; TAMANUKI, T; UCHIDA, T et al.Japanese journal of applied physics. 1992, Vol 31, Num 3, pp 949-950, issn 0021-4922, 1Article

Electroluminescent processes in quantum well structuresTSUI, E.S.-M; BLOOD, P; FLETCHER, E. D et al.Semiconductor science and technology. 1992, Vol 7, Num 6, pp 837-844, issn 0268-1242Article

Frequency stabilization of a GaAlAs semiconductor laser by voltage controlLUDVIGSEN, H; HOLMLUND, C; IKONEN, E et al.Applied optics. 1992, Vol 31, Num 18, pp 3384-3386, issn 0003-6935Article

Optical absorption studies of the excitonic linewidth in GaAs/Ga_0.73Al_0.27As multiple quantum well structureSELCI, S; CRICENTI, A; RIGHINI, M et al.Applied surface science. 1992, Vol 56-58, pp 637-642, issn 0169-4332, bConference Paper

A direct method to produce and measure compositional grading in Al_xGa_1-xAs alloysSUNDARAM, M; WIXFORTH, A; GEELS, R. S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 3, pp 1524-1529, issn 0734-211XArticle

Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxyITO, H; MAKIMOTO, T.Applied physics letters. 1991, Vol 58, Num 24, pp 2770-2772, issn 0003-6951Article

Epitaxial growth and selectivity of Al_xGa_1-xAs using novel metalorganic precursorsGOORSKY, M. S; KUECH, T. F; POTEMSKI, R. M et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 6, pp 1817-1826, issn 0013-4651Article

15W CW monolithic AlGaAs laser diode arraysSAKAMOTO, M; WELCH, D. F; YAO, H et al.Electronics Letters. 1991, Vol 27, Num 11, pp 902-903, issn 0013-5194Article

Broad-area high-power semiconductor optical amplifierGOLDBERG, L; WELLER, J. F.Applied physics letters. 1991, Vol 58, Num 13, pp 1357-1359, issn 0003-6951Article

Molecular-beam epitaxy growth and uniformity test of modulation-doped Al_0.3Ga_0.7As/GaAs heterostructure on 4-in.diameter GaAs(100)YANG, K; SO, K. C; TAYLOR, A. P et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 5, pp 2548-2550, issn 0734-211XArticle

Novel photonic switch arrays consisting of vertically integrated multiple-quantum-well reflection modulators and phototransistors : exciton absorptive reflection switchAMANO, C; MATSUO, S; KUROKAWA, T et al.IEEE Photonics technology letters. 1991, Vol 3, Num 8, pp 736-738Article

One-electron transport in a system with a controlled transparency of tunnel barriersODINTSOV, A. A; TYBULEWICZ, A.Soviet physics. Semiconductors. 1991, Vol 25, Num 8, pp 783-785, issn 0038-5700Article

Thermal resistance measurements for AlGaAs/GaAs heterojunction bipolar transistorsADLERSTEIN, M. G; ZAITLIN, M. P.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 6, pp 1553-1554, issn 0018-9383Article